
Description
SST-10-DR Deep Red LED
Features
• High Power Deep Red LED with Peak Wavelength of 660nm
• Wall-Plug Efficiency: typ. 52% @350mA
• 90 or 130° viewing angle at 50% Iv
• Low Thermal Resistance
• Built-in ESD Protection
• RoHS and REACh compliant
Applications
• Horticulture / Growlights
• Life Sciences
• Medical
SST-10 Binning Structure
SST-10 Deep Red LEDs are tested for luminous flux and chromaticity at a drive current of 350mA - 20ms single pulse and placed into one of the following luminous flux (FF) and chromaticity (WW) bins:
Flux Bins - Test condition=350mA, 250C, 20ms pulse
|
Flux Bin (FF) |
Minimum Flux (mW) |
Maximum Flux (mW) |
|
J |
350 |
390 |
|
K |
390 |
430 |
|
L |
430 |
470 |
|
M |
470 |
510 |
Wavelength Bins - Test condition=350mA, 250C, 20ms pulse
|
Chromaticity Bin (WW) |
Minimum Wavelength (nm) |
Maximum Wavelength (nm) |
|
D1 |
640 |
645 |
|
D2 |
645 |
650 |
|
D3 |
650 |
655 |
|
D4 |
655 |
660 |
|
D5 |
660 |
665 |
|
D6 |
665 |
670 |
Ordering Information
|
Products |
Ordering Part Number |
Description |
|
SST-10-DR-B90 |
SST-10-DR-B90-xx123 |
High Power 1-mm2 Deep Red LED in a 3535 surface mount package and a 90-degree lens |
|
SST-10-DR-B130 |
SST-10-DR-B130-xx123 |
High Power 1-mm2 Deep Red LED in a 3535 surface mount package and a 130-degree lens |
SST-10 Deep Red Bin Kit Order Codes
|
Color |
Luminous Flux |
Chromaticity Bins |
Kit Number |
|
|
Bin Kit Flux Code |
Min. Flux |
|||
|
Deep Red |
J |
350 |
D1,D2,D3,D4,D5,D6 |
J660 |
|
K |
390 |
D1,D2,D3,D4,D5,D6 |
K660 |
|
Optical and Electrical Characteristics at 350mA
|
Parameter |
Symbol |
Minimum |
Typical |
Maximum |
Unit |
|
Forward Current2 |
If |
350 |
1,500 |
mA |
|
|
Output Power |
Φ r |
410 |
mW |
||
|
Forward Voltage |
Vf |
1.8 |
2.10 |
2.6 |
V |
|
Photosynthetic Photon Flux (PPF) |
PPF400-700nm |
2.24 |
μmol/s |
||
|
PPF Efficiency (PPE) |
PPE400-700nm |
3.05 |
μmol/J |
||
|
Wall-Plug Efficiency |
WPE |
56 |
% |
||
|
Viewing Angle |
2 Ø1/2 |
90 or 130 |
degrees |
||
|
Peak Wavelength |
λP |
640 |
660 |
670 |
nm |
|
FWHM |
Δλ1/2 |
20 |
22 |
24 |
nm |
|
Thermal Resistance (Electrical) |
RTH |
5.3 |
°C/W |
Absolute Maximum Ratings2
|
Parameter |
Symbol |
Rating |
Unit |
|
Forward Current3,4 |
I |
1.5 |
A |
|
Power Dissipation |
PD |
4.0 |
W |
|
Reverse Voltage |
Vr |
5 |
V |
|
Storage Temperature |
TsTg |
-40~100 |
°C |
|
Junction Temperature |
TJ |
115 ºC |
°C |
|
Soldering Temperature |
TsLD |
JEDEC 020, 260 ºC |
|
|
ESD Sensitivity (HBM) |
Vb |
6000 |
V |



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