Description
SST-10-IRD-810nm
Dual Junction Surface Mount Series
Low Thermal Resistance Infrared LED
Features
• High Power Infrared LED with typical 810 nm centroid wavelength
• High thermal conductivity substrate
• 90 and 130-degree viewing angle
• Operation at up to 1.5 A CW and 5 A pulse
• Corrosion Robustness Class: 3B
• Built-in ESD protection
• Low Thermal Resistance
• Suitable for all SMT Assembly Methods
Applications
• Surveillance Systems / CCTV
• Iris and Face Recognition
• License Plate Scanning
• Automotive Sensing
• Machine Vision
• Night Vision
Ordering Part Numbers
|
Peak Wavelength |
Radiometric Flux |
Viewing Angle |
Ordering Part Number |
|
|
Minimum Flux Bin |
Minimum Flux |
|||
|
810 nm |
S |
475 mW |
90 |
SST-10-IRD-B90H-S810 |
|
130 |
SST-10-IRD-B130H-S810 |
|||
Radiometric Flux Bins1
|
Flux Bin |
Binning @ 350 mA, Tc=25°C2 |
|
|
Minimum Flux (mW) |
Maximum Flux (mW) |
|
|
S |
475 |
505 |
|
T |
505 |
535 |
|
U |
535 |
565 |
|
V |
565 |
595 |
|
W |
595 |
625 |
|
X |
625 |
655 |
|
Y |
655 |
685 |
|
Z |
685 |
715 |
Forward Voltage Bins2
|
Voltage Bin |
Binning @ 350 mA, Tc= 25°C |
|
|
Minimum Voltage (V) |
Maximum Voltage (V) |
|
|
V9 |
2.8 |
3.0 |
|
Va |
3.0 |
3.2 |
|
Vb |
3.2 |
3.4 |
Peak Wavelength Bins3
|
Wavelength Bin |
Binning @ 350 mA, Tc= 25°C |
|
|
Minimum Wavelength (nm) |
Maximum Wavelength (nm) |
|
|
810 |
800 |
830 |
Characteristics1
|
Parameter (If=350 mA, Tc=25°C) |
Symbol |
Value |
Unit |
|
|
Forward Current |
If |
350 |
mA |
|
|
Typical Output Power |
φv |
535 |
mW |
|
|
Typical Output Power @ 1.0A, t = 20ms |
φv 1.0A |
1470 |
mW |
|
|
Forward Voltage |
Minimum |
Vf min |
2.8 |
V |
|
Typical |
Vf typ |
3.0 |
||
|
Maximum |
Vf max |
3.4 |
||
|
Viewing Angle |
B90H |
2 Ø1/2 |
90 |
° |
|
B130H |
130 |
|||
|
Radiant Intensity @ 1.0A, t = 20ms |
B90H |
fe typ |
770 |
mW/sr |
|
B130H |
410 |
|||
|
Peak Wavelength |
λp |
815 |
nm |
|
|
Centroid Wavelength |
λc |
810 |
||
|
FWHM |
∆λ1/2 |
30 |
||
|
Temperature Coefficient of Voltage |
∆Vf/∆T |
-3.0 |
mV/°C |
|
|
Temperature Coefficient of Radiometric Power |
∆Φ/∆T |
-0.2 |
%/°C |
|
|
Temperature Coefficient of Wavelength |
∆λ/ ∆T |
0.3 |
nm/°C |
|
|
Electrical Thermal Resistance (Junction to Solder Point)2 |
Rth JS elec |
2.4 |
°C/W |
|
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